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SiC MOSFET

SiC MOSFET

Third-generation semiconductor power devices are one of the important components of future high-performance power devices. The Hailanjiang R&D team has rich experience in wide-bandgap semiconductor research and has developed a series of SiC MOSFET and GaN HEMT devices. SiC MOSFET features high power density, low reverse recovery charge, and high switching frequency, with an operating temperature up to 200°C, making it a perfect replacement for Si IGBT in high-voltage and high-power applications.

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Product
Data Sheet
Product Status
Qualification
Package Type
Technology
V DSMax
R DS(on)Typ
VGS(th) Max
I D@25℃ Max
Q G(tot)
Output Capacitance
Maximum Junction Temperature
Mounting
Feature
HCW120N16M2 Active Industrial TO247 3L eSiC M2 1200 V 16 mΩ 4.5 V 118.0 A 152 nC 227 pF 175 ℃ Through Hole High Performance
HCZ120N16M2 Active Industrial TO247 4L eSiC M2 1200 V 16 mΩ 4.5 V 118.0 A 152 nC 227 pF 175 ℃ Through Hole High Performance
HCW120N40M2 Active Industrial TO247 3L eSiC M2 1200 V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175 ℃ Through Hole High Performance
HCZ120N40M2 Active Industrial TO247 4L eSiC M2 1200 V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175 ℃ Through Hole High Performance
HCZN120N40M2 Active Industrial TO247-4L Notch eSiC M2 1200 V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175 ℃ Through Hole High Performance
HCRZ120N40M2A Active Automotive TSPAK-DBC eSiC M2 1200 V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175 ℃ Surface Mount High Performance
HCR120N40M2A Active Automotive TSPAK-LF eSiC M2 1200 V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175 ℃ Surface Mount High Performance
HCW120N21M1 Active Industrial TO247 3L eSiC M1 1200 V 21 mΩ 4.5 V 100.0 A 200 nC 224 pF 175 ℃ Through Hole High Performance
HCZ120N21M1 Active Industrial TO247 4L eSiC M1 1200 V 21 mΩ 4.5 V 100.0 A 198 nC 224 pF 175 ℃ Through Hole High Performance
HCW120N40M1 Active Industrial TO247 3L eSiC M1 1200 V 40 mΩ 4.5 V 60.0 A 108 nC 124 pF 175 ℃ Through Hole High Performance
HCZ120N40M1 Active Industrial TO247 4L eSiC M1 1200 V 40 mΩ 4.5 V 60.0 A 104 nC 124 pF 175 ℃ Through Hole High Performance
HCW120N80M1 Active Industrial TO247 3L eSiC M1 1200 V 80 mΩ 4.5 V 30.0 A 50 nC 64 pF 175 ℃ Through Hole High Performance
HCZ120N80M1 Active Industrial TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30.0 A 52 nC 64 pF 175 ℃ Through Hole High Performance
HCBF120N80M1 Active Industrial D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30.0 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
HCZ120N80M1A Active Automotive TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30.0 A 52 nC 64 pF 175 ℃ Through Hole High Performance
HCBF120N80M1A Active Automotive D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30.0 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
HCW65N27M1 Active Industrial TO247 3L eSiC M1 650 V 27 mΩ 4.5 V 75.0 A 91 nC 207 pF 175 ℃ Through Hole High Performance
HCZ65N27M1 Active Industrial TO247 4L eSiC M1 650 V 27 mΩ 4.5 V 75.0 A 91 nC 207 pF 175 ℃ Through Hole High Performance
HCW65N45M1 Active Industrial TO247 3L eSiC M1 650 V 45 mΩ 4.5 V 44.0 A 56 nC 131 pF 175 ℃ Through Hole High Performance
HCZ65N45M1 Active Industrial TO247 4L eSiC M1 650 V 45 mΩ 4.5 V 44.0 A 56 nC 131 pF 175 ℃ Through Hole High Performance
HCT65N27M1 Active Industrial TOLL eSiC M1 650 V 27 mΩ 4.5 V 84.0 A 91 nC 207 pF 175 ℃ Surface Mount High Performance